for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 1 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz general description features functional diagram output ip3: +25 dbm p1db: +16 dbm gain: 13 db supply voltage: +5v 50 ohm matched input/output die size: 2.2 x 1.22 x 0.1 mm electrical speciications , t a = +25 c, vdd = 5v, idd = 80ma [2] typical applications this HMC-ABH209 is ideal for: ? short haul / high capacity links ? wireless lan bridges ? military & space the HMC-ABH209 is a high dynamic range, two stage gaas hemt mmic medium power ampliier which operates between 55 and 65 ghz. the hmc- abh209 provides 13 db of gain, and an output power of +16 dbm at 1 db compression from a +5v supply voltage. all bond pads and the die backside are ti/au metallized and the ampliier device is fully passivated for reliable operation. the HMC-ABH209 gaas hemt mmic medium power ampliier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. parameter min. typ. max. units frequency range 55 - 65 ghz gain 12 13 db input return loss 13 db output return loss 17 db output power for 1 db compression (p1db) 16 dbm output third order intercept (ip3) 25 dbm saturated output power (psat) 18 dbm supply current (idd) 80 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg between -1v to +0.3v (typ -0.3v) to achieve idd total = 80ma information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 2 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz fixtured output power vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency 0 2 4 6 8 10 12 14 16 18 50 52 54 56 58 60 62 64 66 68 gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 50 52 54 56 58 60 62 64 66 68 return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 50 52 54 56 58 60 62 64 66 68 return loss (db) frequency (ghz) 10 12 14 16 18 20 55 56 57 58 59 60 61 62 63 64 65 p1db p5db pout (dbm) frequency (ghz) information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 3 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 drain bias voltage +5.5 vdc gain bias voltage -1 to +0.3 vdc rf input power 10 dbm storage temperature -65 c to + 150 c chennel temperature +180 c die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the ?packaging information? section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 4 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz pad number function description interface schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2 rfout this pad is ac coupled and matched to 50 ohms. 3 vdd power supply voltage for the ampliier. see assembly for required external components. 4 vgg gate control for ampliier. please follow mmic ampliier biasing procedure application note. see assembly for required external components. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 5 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-la yer) placed no farther than 30 mils from the ampliier. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons o n input and output. information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite. com linear & power amplifier - chip 6 HMC-ABH209 v03.0714 g a a s hemt mmic medium power amplifier, 55 - 65 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note) . 50 ohm microstrip transmission lines on 0.127mm (5 mil) thic k alumina thin ilm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin ilm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possibl e in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd pro - tective containers, and then sealed in an esd protective bag for shipment . once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air br idges and should not be touched with vacuum collet, tweezers, or ingers. mounting the chip is back-metallized and can be die mounted with ausn eutectic prefo rms or with electrically conductive epoxy. the mounting surface should be clean and lat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surfa ce temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, to ol tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so tha t a thin epoxy illet is observed around the perimeter of the chip once it is placed into position. cure epoxy per t he manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds sho uld be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermoso nically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams . all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic en ergy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0. 31 mm). 0.102mm (0.004) thick gaas mmic w rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thickmoly tab information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
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